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Conferences > CLEO_AT > 2011 > JTuI > JTuI86

Modal gain and time-resolved photoluminescence of Ga(NAsP) heterostructures pseudomorphically grown on Silicon (001) substrate

Nektarios Koukourakis, Dominic A. Funke, Nils C. Gerhardt, Martin R. Hofmann, B. Kunert, S. Liebich, D. Trusheim, M. Zimprich, C. Bückers, S. W. Koch, K. Volz, and W. Stolz

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Abstract

We present room-temperature gain (up to 80 cm−1) and time-resolved photoluminescence measurements in Ga(NAsP) grown lattice-matched on silicon substrate. We find a strong impact of the barrier-growth conditions on the optical quality of the material.

© 2011 Optical Society of America

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