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Stability in growth of 6H-SiC and 3C-SiC for LEDs and solar cells

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Abstract

6H- and 3C-SiC layers were grown using a sublimation based process. The polytype balance is mainly given by the substrate orientation and growth temperature. This paves the way to use 6H- and 3C-SiC in optoelectronic applications.

© 2012 Optical Society of America

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