Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Stability in growth of 6H-SiC and 3C-SiC for LEDs and solar cells

Not Accessible

Your library or personal account may give you access

Abstract

6H- and 3C-SiC layers were grown using a sublimation based process. The polytype balance is mainly given by the substrate orientation and growth temperature. This paves the way to use 6H- and 3C-SiC in optoelectronic applications.

© 2012 Optical Society of America

PDF Article
More Like This
Enhanced extraction efficiency of fluorescent SiC by surface nanostructuring

Yiyu Ou, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi, and Haiyan Ou
JW3L.8 CLEO: Applications and Technology (CLEO_AT) 2012

A high-temperature endurable MOEMS accelerometer based on 6H-SiC

Li Hui, Liu Liying, Huang Tingfeng, Feng Lishuang, and Zhou Zhen
SeW3D.7 Optical Sensors (Sensors) 2016

Mode-locked Fiber Laser with Few-Layer Epitaxial Graphene Grown on 6H-SiC Substrates

Jiang Liu, Rusheng Wei, Xiangang Xu, and Pu Wang
CMK3 CLEO: Science and Innovations (CLEO_SI) 2011

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved