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Two-Photon Laser-Assisted Device Alteration in Silicon Integrated Circuits using a 1.28-μm Femtosecond Raman-Soliton Fiber Laser

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Abstract

By inducing two-photon absorption to perturb the switching characteristics of sensitive transistors located within the active layer of a proprietary 28-nm silicon test chip, we demonstrate time-resolved nonlinear laser-assisted device alteration.

© 2013 Optical Society of America

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