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Conferences > CLEO_AT > 2014 > JTh5B > JTh5B.9

1.8 Watt RF Power and 60% Power Conversion Efficiency Based on Photodiode Flip-chip-bonded on Diamond

Xiaojun Xie, Qiugui Zhou, Kejia Li, Andreas Beling, and Joe Campbell

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Abstract

A 1.8 W RF output power at 10 GHz and 60 % power conversion efficiency (PCE) at 6 GHz have been achieved using a modified uni-traveling-carrier photodiode flip-chip bonded on diamond.

© 2014 Optical Society of America

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More Like This
High Power Balanced InGaAs/InP Photodetector Flip-chip Bonded on Diamond

Qiugui Zhou, Allen. S. Cross, Andreas Beling, and Joe C. Campbell
IW5A.5 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2013

53.5 % Photodiode RF Power Conversion Efficiency

Ulrik Gliese, Kristina Colladay, Alexander S. Hastings, David A. Tulchinsky, Vincent J. Urick, and Keith J. Williams
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