Random Surface Texturing of mc-Silicon for Solar Cells with Picosecond Lasers; a Comparison between 1064 nm, 532 nm and 355 nm Laser Emission Wavelengths

Simona Binetti; Alessia Le Donne; Andrea Rolfi; Emanuele Grilli; Beat Jäggi; Beat Neuenschwander; Chiara Busto; Davide Scorticati; Luca Longoni; Sergio Pellegrino

doi:10.1364/CLEO_AT.2015.AM2K.5

CLEO: 2015
OSA Technical Digest (online) (Optica Publishing Group, 2015),
paper AM2K.5
•https://doi.org/10.1364/CLEO_AT.2015.AM2K.5

Random Surface Texturing of mc-Silicon for Solar Cells with Picosecond Lasers; a Comparison between 1064 nm, 532 nm and 355 nm Laser Emission Wavelengths

Simona Binetti, Alessia Le Donne, Andrea Rolfi, Emanuele Grilli, Beat Jäggi, Beat Neuenschwander, Chiara Busto, Davide Scorticati, Luca Longoni, and Sergio Pellegrino

CLEO: Applications and Technology 2015

San Jose, California United States
10–15 May 2015
ISBN: 978-1-55752-968-8

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Microprocessing Laser Processing of Silicon and Other Materials (AM2K)

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S. Binetti, A. Le Donne, A. Rolfi, E. Grilli, B. Jäggi, B. Neuenschwander, C. Busto, D. Scorticati, L. Longoni, and S. Pellegrino, "Random Surface Texturing of mc-Silicon for Solar Cells with Picosecond Lasers; a Comparison between 1064 nm, 532 nm and 355 nm Laser Emission Wavelengths," in CLEO: 2015, OSA Technical Digest (online) (Optica Publishing Group, 2015), paper AM2K.5.

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Abstract

Multicrystalline Silicon was textured with picosecond laser. Different laser wavelengths (λ = 1064, 532, 355 nm) where compared regarding laser-induced damage. We found that λ = 355 nm picosecond radiation resulted in shallower defect-reach region

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