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2.5–3.0 µm strain-compensated InAs/InxGa1-xAs multiple quantum well lasers grown on InAlAs metamorphic buffer layers

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Abstract

InP-based strain-compensated InAs/InxGa1-xAs multiple quantum well lasers emitting at 2.5–3.0 µm are realized on InAlAs metamorphic buffer layers. A long lasing wavelength up to 2.9 µm at 230 K in pulsed mode is achieved.

© 2016 Optical Society of America

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Poster Presentation

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