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Integrated artificial saturable absorber based on Kerr nonlinearity in silicon nitride

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Abstract

An integrated artificial fast saturable absorber at 1.9 μm is demonstrated in a CMOS-compatible process. It is based on the Kerr effect in a nonlinear Mach-Zehnder Interferometer using silicon nitride waveguides embedded in SiO2.

© 2017 Optical Society of America

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