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Broadband Terahertz-Light Emission by Current-Injection Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor

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We report on amplified spontaneous broadband terahertz emission in 1–7.6 THz range at 100 K via current injection in a distributed-feedback (DFB) dual-gate graphene-channel transistor. The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

© 2017 Optical Society of America

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