Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Broadband Terahertz-Light Emission by Current-Injection Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor

Not Accessible

Your library or personal account may give you access

Abstract

We report on amplified spontaneous broadband terahertz emission in 1–7.6 THz range at 100 K via current injection in a distributed-feedback (DFB) dual-gate graphene-channel transistor. The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.

© 2017 Optical Society of America

PDF Article
More Like This
Current-Injection Terahertz Lasing in Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Maxim Ryzhii, Victor Ryzhii, and Taiichi Otsuji
SM3L.7 CLEO: Science and Innovations (CLEO_SI) 2016

Terahertz Light Amplification by Current-Driven Plasmon Instabilities in Graphene

Stephane Boubanga-Tombet, Deepika Yadav, Wojciech Knap, Vyacheslav V. Popov, and Taichii Otsuji
SW4D.4 CLEO: Science and Innovations (CLEO_SI) 2018

AC-Driven Perovskite Light-Emitting Field-Effect Transistors

Francesco Maddalena, Xin Yu Chin, Daniele Cortecchia, Annalisa Bruno, and Cesare Soci
JSV_1_2 European Quantum Electronics Conference (EQEC) 2017

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved