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Conferences > CLEO_AT > 2017 > ATh3C > ATh3C.5

Valley-dependent Carrier and Lattice Dynamics in Silicon measured by Transient XUV Spectroscopy

Scott K. Cushing, Lucas M. Carneiro, Michael Zürch, Peter M. Kraus, Chris J. Kaplan, Hung-Tzu Chang, and Stephen R. Leone

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Abstract

Transient XUV core level spectroscopy is used to resolve photoexcited electron and hole distributions, as well as carrier-phonon and phonon-phonon scattering times, in the Γ, L, and X valleys of silicon.

© 2017 Optical Society of America

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