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Conferences > CLEO_AT > 2017 > JTu5A > JTu5A.13

Single Photon Ge Vacancy Centers in Heteroepitaxial and Homoepitaxial Diamond Grown by HFCVD

Aaron D. Jackson, Amber C. Wingfield, and Gary L. Harris

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Abstract

Epitaxial diamond films containing single photon emitting Ge vacancies (GeV) were grown on both diamond seeded Si substrates and single crystal (100) diamond wafers. Photoluminescence (PL) measurements showed a zero phonon line near 602nm.

© 2017 Optical Society of America

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This paper was not presented at the conference
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