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Conferences > CLEO_AT > 2017 > JW2A > JW2A.110

Highly efficient GeSn electroabsorprtion modulator using higher-order-mode for mid-infrared Ge-on-Si platform

Takanori Sato, Minami Akie, Masakazu Arai, Takeshi Fujisawa, and Kunimasa Saitoh

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Abstract

A highly efficient GeSn electroabsorption modulator using higher-order-mode is proposed for mid-infrared photonics. Proposed structure is suitable for monolithic integration on Ge-on-Si platform and > 10 dB enhancement of the extinction ratio is possible.

© 2017 Optical Society of America

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