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Conferences > CLEO_AT > 2018 > JTu2A > JTu2A.10

Frequency-Doubled Wafer-Fused 638 nm VECSEL with an Output Power of 5.6 W

Emmi Kantola, Tomi Leinonen, Antti Rantamäki, Mircea Guina, Alexei Sirbu, and Vladimir Iakovlev

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Abstract

We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.

© 2018 The Author(s)

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