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1.5 μm GaInAsP Stripe Laser Comparison Between InP Substrate and Directly Bonded InP/Si Substrate

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Silicon optoelectronic integrated circuits (OEIC) has become the best platform for optical interconnection. Crystal growth on the Si substrate for 1.5 μm GaInAsP stripe laser diode has been demonstrated via MOVPE and successfully achieved the lasing operation in the pulse regime under the room temperature. The most important approach that was inculcated prior to the growth process is that we have adapted the direct wafer bonding technique for InP thin film and Si substrate. We have analyzed the comparison of lasing characteristics between directly bonded InP/Si substrate and InP substrate as a reference. The I-L characteristics show that there is a difference in the absolute value of the threshold current between InP/Si substrate and InP substrate. We have also successfully obtained the Fabry-Perot oscillation of 1.5 μm GaInAsP stripe laser on directly bonded InP/Si substrate.

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