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Conferences > CLEO_AT > 2018 > JTu2A > JTu2A.27

GaSb-based 2.7μm laser diode with GaAs top cladding

Timothy Bate, Chunte Lu, Robert Palomino, Chi Yang, Timothy C. Newell, Sanh Luong, and Ron Kaspi

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Abstract

A GaSb-based type-I diode laser heterostructure was grown with a highly mismatched GaAs top clad using MBE. A direct comparison of laser diode characteristics with a conventional structure indicates that despite the fully relaxed clad layer, high peak power >300 mW is generated by these devices. The small increase in the threshold current density and ~27% reduction in the slope efficiency is likely due to increase in the internal loss due to defects.

© 2018 The Author(s)

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