Very-Fast Timing Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers

Yi-Shan Lee; Yu-Jia Chen; Naseem; Ping-Li Wu; Jin-Wei Shi

doi:10.1364/CLEO_AT.2020.AF1I.8

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper AF1I.8
•https://doi.org/10.1364/CLEO_AT.2020.AF1I.8

Very-Fast Timing Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers

Yi-Shan Lee, Yu-Jia Chen, Naseem, Ping-Li Wu, and Jin-Wei Shi

CLEO: Applications and Technology 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Ultraviolet to Green Wavelength Semiconductor Devices (AF1I)

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Y. Lee, Y. Chen, Naseem, P. Wu, and J. Shi, "Very-Fast Timing Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper AF1I.8.

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Abstract

We present novel InGaAs/InAlAs single photon avalanche diodes with dual multiplication layers, large active diameters (240µm), high detection efficiency (32%), record small jitter (35ps), and low afterpulsing (<1% at 2µs hold-off time) at nearly 200K.

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