Laser De-bonding from Silicon Wafers with Picosecond 2.09-μm Holmium Laser

Ignas Astrauskas; Boris Povazay; Audrius Pugzlys; Audrius Pugzlys; Andrius Baltuska; Andrius Baltuska

doi:10.1364/CLEO_AT.2020.AW4I.7

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper AW4I.7
•https://doi.org/10.1364/CLEO_AT.2020.AW4I.7

Laser De-bonding from Silicon Wafers with Picosecond 2.09-μm Holmium Laser

Ignas Astrauskas, Boris Povazay, Audrius Pugzlys, and Andrius Baltuska

CLEO: Applications and Technology 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Optimization of Laser Based Manufacturing (AW4I)

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I. Astrauskas, B. Povazay, A. Pugzlys, and A. Baltuska, "Laser De-bonding from Silicon Wafers with Picosecond 2.09-μm Holmium Laser," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper AW4I.7.

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Abstract

We study an effect of pulse duration of 2.09-pm laser on the laser de-bonding of gold from silicon wafers. Developed picosecond Ho:YAG laser with a simple dispersion management is found to be optimal for the process.

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