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Gate-Tunable Single-Photon Emitting Diode with an Extremely Low Tuning Time

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Abstract

We present a gate-tunable single-photon emitting diode based on a color center in 4H- SiC whose emission rate can be dynamically switched from 0.16 to 40 Mcps with a characteristic time of only 200 ps.

© 2020 The Author(s)

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Poster Presentation

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