Abstract

A photodetector based on the few-layered GaGeTe is demonstrated. It exhibits a broadband spectral response ranging from UV to NIR. A high responsivity of 1.5 A/W at 1310 nm and 750 A/W at 404 nm is measured. Furthermore, the devices is very stability under ambient condition which makes GaGeTe excellent candidate for UV to NIR optoelectronics application.

© 2021 The Author(s)