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Conferences > CLEO_AT > 2022 > AW4M > AW4M.5

Monolithically Integrated Extended Cavity Diode Laser emitting at 778 nm

S. Wenzel, O. Brox, P. Della Casa, H. Wenzel, B. Arar, A. Knigge, M. Weyers, and A. Wicht

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Abstract

We present a monolithically integrated extended cavity diode laser at 778 nm with a 3 dB linewidth of 200 kHz @ 1 ms. This is the first successful demonstration of active layer removal in AlGaAs by a 2-step epitaxy manufacturing process.

© 2022 The Author(s)

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