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Controlling the P T Symmetry of Dirac Plasmons in Dual-Grating-Gate Graphene THz Laser Transistors for Ultrafast Gain Switching

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Abstract

We introduce a new scheme of actively controlling the PT symmetry of the graphene Dirac plasmon metasurface in a graphene-channel laser transistor structure. Numerical simulation demonstrates the capability of 100-Gbit/s-class ultrafast gain-switching in its plasmonic THz laser operation by electrically modulating the PT symmetry by the applied bias voltages.

© 2022 The Author(s)

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Bias voltage dependency of plasmonic instability and terahertz radiation in a dual-grating-gate high-electron-mobility transistor

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