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Ultralow Energy van der Waals InSe PN junction heterostructure photodetector for NIR applications

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Abstract

We show a self-driven indium selenide (InSe) p-n heterojunction photodetector with a threefold increase in responsivity at 980 nm over a photoconductor detector based on p- or n-doped regions.

© 2022 The Author(s)

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