Abstract
We present a telecommunication-compatible, bias-free photoconductive terahertz emitter fabricated on an InAs layer grown on silicon, which provides significant enhancement in the radiated power above 0.5 THz compared to the state-of-the-art bias-free terahertz emitters.
© 2022 The Author(s)
PDF Article | Presentation VideoMore Like This
Deniz Turan, Nezih Tolga Yardimci, Ping-Keng Lu, and Mona Jarrahi
SM4F.3 CLEO: Science and Innovations (CLEO:S&I) 2020
Deniz Turan, Nezih Tolga Yardimci, and Mona Jarrahi
SW3F.4 CLEO: Science and Innovations (CLEO:S&I) 2019
Ping-Keng Lu and Mona Jarrahi
SM4F.1 CLEO: Science and Innovations (CLEO:S&I) 2020