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A Telecommunication-Compatible, Bias-Free Photoconductive Terahertz Emitter on a Silicon Substrate

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Abstract

We present a telecommunication-compatible, bias-free photoconductive terahertz emitter fabricated on an InAs layer grown on silicon, which provides significant enhancement in the radiated power above 0.5 THz compared to the state-of-the-art bias-free terahertz emitters.

© 2022 The Author(s)

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More Like This
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