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Global Net-gain Characterization of Monolithically Integrated Waveguide Amplifiers

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Abstract

Global net-gain characterization is presented for the monolithically integrated Al2O3:Er3+-Si3N4 amplifiers by comparing the amplified signal to the output of the passive reference waveguides, showing good agreement with the conventional signal enhancement method.

© 2022 The Author(s)

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More Like This
Photonic integrated erbium-doped silicon nitride amplifiers with intense net gain

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