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Normal-Incidence Infrared Silicon Photodetectors Based on Surface-State Absorption and Their Applications

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Abstract

We fabricated and tested a normal-incidence infrared silicon photodetector based on surface-state absorption for free-space optical applications. It featured -46-dBm sensitivity and near transparency at 1560-nm wavelength as well as broad spectral photoresponse.

© 2022 The Author(s)

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