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Deep-ultraviolet Electroluminescence in van der Waals Heterostructures of Hexagonal Boron Nitride

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Abstract

Since hBN is a wide bandgap semiconductor(~5.96eV), electroluminescence has not been demonstrated at deep-ultraviolet frequencies. We report deep-ultraviolet electroluminescence from tunnel-injected charge carriers in hBN. Our work shows potentials for hBN based deep-ultraviolet light-emitting devices.

© 2023 The Author(s)

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