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Efficient all-optical switching in a nonlinear AlGaAs X-junction

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Abstract

Recently there has been a considerable amount of interest in all-optical switching using semiconductor waveguides operated at a wavelength corresponding to the half band gap.1 In this spectral region there is an enhancement in the nonlinear refractive index coefficient, n2, and the detrimental effects of two-photon absorption are minimised. By proper choice of material parameters, devices can be designed to operate in the 1.55 μm, low-loss window.

© 1994 IEEE

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