Abstract

Distributed Bragg reflector (DBR) semiconductor lasers have received considerable attention because of their superior operating characteristics and their suitability for integration into a surface-emitting or edge-emitting device to provide a coherent and high-power light source.^1,2 Recent reports have demonstrated that a DBR laser is a key component in mono-lithically integrated master oscillator power amplifiers (M-MOPAs) and mono-lithically integrated active grating master oscillator power amplifiers (MAG-MO-PAs). These devices have shown considerable promise as efficient sources for a variety of applications including freespace optical communication, remote sensing, optical printers, and nonlinear frequency conversion.

© 1994 IEEE