Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Very short, low-loss multiquantum well GaAs/GaAlAs vertical directional coupler switch

Not Accessible

Your library or personal account may give you access

Abstract

For application of directional couplers in optoelectronic integrated circuits, device length has to be reduced to about 100 µm to offer the benefits of high cutoff frequency and low space consumption. This can be achieved by vertical arrangement of the waveguides1 and exploiting the Quantum Confined Stark Effect for switching the device.2 Because of well known and highly reproducible material parameters, MBE grown GaAs/GaAlAs was chosen.

© 1994 IEEE

PDF Article
More Like This
A Novel Device Structure of Vertical Multiple Quantum Well Directional Coupler Switch for Low Switching Voltage

Takeharu Yamaguchi, Kunio Tada, and Takuya Ishikawa
WH4 Integrated Photonics Research (IPR) 1992

Improved optical switch recovery time by carrier sweep-out in a GaAs/GaAlAs multi-quantum well waveguide directional coupler

P. LiKamWa, A. Miller, J. S. Roberts, and P. N. Robson
TuE5 Integrated Photonics Research (IPR) 1991

Subpicosecond switching in a current injected GaAs/AlGaAs multiple-quantum-well nonlinear directional coupler

S. G. Lee, B. P. McGinnis, R. Jin, J. Yumoto, G. Khitrova, H. M. Gibbs, and N. Peyghambarian
CTuC4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1994

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.