Abstract

A low series resistance is a prerequisite for achieving acceptable performance of a vertical-cavity, surface-emitting laser (VCSEL). For laser emission at λ = 900–1000 nm, the binary GaAs/AlAs combination provides the adequate material choice for the distributed Bragg reflectors (DBRs), considering the difference in refractive index and the thermal conductivity. In this case, however, the potential barriers at the heterointerfaces seriously impeded the current flow and lead to high series resistance, particularly in the p-type doped DBR structures.

© 1994 IEEE