Abstract

We report on a MQW-device operation under electric field at room temperature. The samples are grown by MBE on a transparent substrate (up to 770 nm) of CdZnTe (Zn = 24%). The strain symmetrized intrinsic QW-region of 20 periods of 10 nm/13 nm CdTe/CdZnTe (Zn = 38%) with two insulating barriers of Zn = 54% (3.3 nm) is grown on an n⁺ (5 10¹⁶cm^-3) indium-doped buffer layer matched to the substrate. The optically active layer is partially removed to give access to the highly doped layer, and electrical contacts are made by evaporation of indium on the n⁺-type CdZnTe. In the first type of samples, a semi-transparent Gold contact (1 mm) is deposited on top of the structure to provide the m-i-s structure with a Schottky barrier. The second type of samples uses a p-i-n structure (p-dopant is atomic nitrogen), which presents a higher built-in field. These two configurations provide a highly resistive depletion layer.

© 1994 IEEE