Abstract
Mid-IR diode lasers emitting in the 3-4 pm region where most of the gases have absorption bands can be used for gas spectroscopy and fibre optic sensors. Electro- and photoluminescence of the InAs/InAsSbP and InAsSb/InAsSbP double heterostructures (DH) have been studied and mechanisms of radiative recombination in DH lasers operating at 4.2180 K in the 3-3.6 µm spectral range including their temperature and current tunability are discussed.
© 1996 IEEE
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