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Evaluation of (In,Ga,As)P-Based Materials for Use in Fabry-Perot Modulator Applications at Low Temperatures

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Abstract

It is now common in applications requiring large bandwidth to transport data using optical links; thereby replacing conventional electrical wiring. The electro-optical interface element in such an optical link could be a semiconductor laser or electroabsorption modulator. At present it is routine to design such devices for room temperature operation. However we can envisage applications requiring devices to work in low temperature environments; for example, in particle colliders, magnetic resonance imaging scanners, supercomputers, infra-red detectors, etc.

© 1996 IEEE

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