Abstract

Non-steady-state photo-EMF observed in short-circuited photorefractive/photoconductive sample illuminated by the vibrating interference pattern (Fig. 1) proved to be promising for many practical interferometric applications and in particular in important kHz frequency range. Up to now this effect was studied quite well in high-frequency approximation when the frequency of vibration Ω is higher then the inverse dielectric relaxation time $\left(\text{Ω}\gg {\text{Ω}}_0={\tau }_M^{-1}\right)$. However, for some promising materials such as photoreferactive semiconductors which seem to be more suitable for practical applications this regime can hardly be reached in kHz region because of their high photoconductivity. Here we consider theoretically the non-steady-state photo-EMF formation in monopolar photoconductor for a case of low modulation frequencies (Ω ≪ Ω₀).

© 1996 IEEE