Abstract

The ZnSe crystals are grown by high-pressure Bridgman method. The samples are cut parallel to (111) crystallographic plane. One of the samples has been annealed at 1100 K in liquid zinc, the other in liquid Zn + 8% Ag . After annealing the samples are mechanically polished and chemically etched^[1]. The main of our experiment is to probe the effect of doping on linear (α) and nonlinear (β) absorption coefficients as well on the third order susceptibility χ^<3> at 532 nm using picosecond pulses. From nonlinear transmittance we have evaluated two photon absorption coefficient β and we have calculated the imaginary part of χ^<3>. Investigating the efficiency (R) of degenerate four wave mixing, we estimated the real part of χ^<3>.

© 1996 IEEE