Abstract

Recent advances in semiconductor growth technology have permitted the development of novel microcavity laser sructures whose characteristic dimensions d are of order the optical wavelength λ. It is to be expected that the operating characteristics of such microcavity lasers will exhibit novel features which depend upon the device geometry. The aim of this work is to develop a microscopic model of VCSELs which takes into account BOTH the realistic geometry, (very thin active layer), and the evolution of material variables in framework of Maxwell-Bloch equations.

© 1996 IEEE