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Conferences > CLEO_Europe > 1998 > CMH > CMH2

Room-temperature pulsed operation of 1.52 μm vertical cavity lasers obtained by localised fusion

A.V. Syrbu, V.P. Iakovlev, C.-A. Berseth, A. Rudra, and E. Kapon

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Abstract

We have shown recently that localized fusion of InP to GaAs provides high quality interfaces, low voltage drop p-GaAs/p-InP junctions and additional lateral current confinement in InGaAsP/InP edge emitting laser diodes fused on p-GaAs substrates1,2. In the present study’, the concept of localized fusion is extended to the fabrication of InGaAsP/InP long wavelength vertical cavity-surface emitting lasers (VCSELs) with double fused n- and p-AlGaAs/GaAs distributed Bragg reflectors (DBR).

© 1998 IEEE

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