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Conferences > CLEO_Europe > 1998 > CTuG > CTuG2

Spontaneous interlevel emission from InGaAs/AlGaAs quantum dot structures

L.E. Vorobjev, D.A. Firsov, V.A. Shalygin, V.N. Tulupenko, Yu.M. Shemyakov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, P.S. Kop'ev, I.V. Kochnev, N.N. Ledentsov, M.V. Maximov, V.M. Ustinov, and Zh. I. Alferov

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Abstract

Intersubband optical transitions of carriers in quantum wells (QW) have been investigated in detail, the infrared detectors, modulators and lasers have been developed. A study of interlevel carrier transitions in quantum dots (QD) opens the new prospects in designing the active devices for far infrared (FIR) region (λ >10μm).

© 1998 IEEE

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