Abstract
This paper reports on low confinement (Γ= 7.5 x 10-3/well), DQW 2 x 8 nm asymmetric laser diode structure designed for high power operation [1]. The low value of Γ is achieved by adding an optical trap layer at one side of the QW’s. A significant part of the optical field is trapped in the n-type Al0.20Ga0.80As optical trap layer with a thickness cf about 0.2 μm, as shown in fig. 1.
© 1998 IEEE
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