Abstract

It is well known that semiconductor lasers fabricated on the quantum-well structure has much better performance than those fabricated on the heterostructure. Multiple quantum wells are usually used because a higher differential gain coefficient can be obtained by increasing the well number [1]. Conventional multiple quantum wells for the semiconductor lasers have the same width. This wok reports that multiple quantum wells of different widths could lead to semiconductor lasers/amplifiers with very different characteristics.

© 1998 IEEE