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Quantum dot (QD) Lasers have decisive advantages compared to quantum well (QW) lasers [1]. The present technology of epitaxial growth of self-organized QDs allows fabricating QD lasers that realize their theoretical benefits. Among those are very low threshold current density, operation in new wavelength ranges for a given substrate and high power operation. Starting from first results on photopumped [2] and injection lasing [3] in self-organized QDs, very recently remarkable progress has been achieved.
© 2000 IEEE
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