Abstract

Wafer direct bonding is an attractive technique for integration of dissimilar materials without any adhesives. The authors have applied this technique to the bonding between III-V compound semiconductors and garnet crystals with the aim of integrating a laser diode and an optical isolator In a previous study, we demonstrated the bonding between InP and several kind of garnets [1], the latter of which are essential to the optical isolator operating in the near infrared region Figure 1 shows a laser diode integrated with an optical isolator The isolator is contacted with the terraced laser diode by wafer bonding. The terraced laser diode requires a vertical mirror facet and a flat etched surface. A GaInAsP etch stop layer of the laser diode is prepared for the flat etched surface A vertical alignment between an active layer the laser diode and a guiding layer of the optical isolattor can be achieved by adjusting the thickness of the cladding layers In this paper, we report the fabrication of the terraced laser diode and wafer bonding between the GaInAsP and the garnet crystals.

© 2000 IEEE