Abstract

We measured the current and temperature dependencies of the modal gain in 23-2.5 µm InGaAsSb/AlGaAsSb/GaSb broad-area and ridge-waveguide lasers. The laser active region consists of two strained quantum wells surrounded by two 0.34 µm undoped Al_0.31Ga_0.69As_0.625Sb_0.375 separate confinement layers [1]. The room-temperature optical-gain data in Figure 1 obtained for a 2.3-µm broad-area device allow the determination of internal loss, internal efficiency and the rate of broadening of material gain with temperature and current. We fabricated 23-2.55 µm single mode lasers with a 5pm ridge width [2], The measured loss values for ridge-waveguide devices were compared with the results of the calculations. Devices with a cavity length of 500 µm display switching of the peak lasing position from 2.5 to 2.3 µm with current and temperature.

© 2000 IEEE