Abstract

Recently, we have observed room temperature visible photoluminescence (PL) from Si rich hydrogenated amorphous silicon nitride (a-SiN_x:H) grown by plasma enhanced chemical vapor deposition (PECVD).¹ We have also observed the enhancement of PL in a planar a-SiN_x:H microcavity realized with metallic mirrors.² In this work, we report the control of PL in an a-SiN_x:H microcavity realized with dielectric mirrors. The microcavity is realized by sandwiching a λ/2 active a-SiN_x:H layer between two distributed Bragg reflectors (DBR's). The microcavity resonance was designed to be at the maximum of the bulk a-SiN_x:H luminescence. The DBR's are composed of 14 pairs of λ/4 alternating layers of a-SiN_x:H and a-SiO_x:H.

© 2000 IEEE