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Conferences > CLEO_Europe > 2000 > CTuB > CTuB2
  • Conference on Lasers and Electro-Optics Europe
  • Technical Digest Series (Optica Publishing Group, 2000),
  • paper CTuB2

10 Gbit/s directly modulated GaInPAs and GaInAlAs semiconductor ridge lasers up to 85C at 1310 nm

J. K. White, A. J. SpringThorpe, T. Garanzotis, and P. Paddon

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Abstract

Directly modulated semiconductor lasers are currently running at 10 Gbit/s. However these devices require thermo-electric coolers to attain their speed. As transmitter prices drop and power budgets become tighter, it is desirable to remove the thermo-electric cooler and require the directly modulated semiconductor laser to operate at temperatures up to 85C.

© 2000 IEEE

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