Abstract

The dynamics of intensively studied THz-pulse radiation from semiconductor surface excited by an ultrashort laser pulse is fundamentally governed by photocarrier-induced depletion field screening caused by charge-separation effect. In this work the spatiotemporal evolution of the surface depletion electric field and photocarrier dynamics at femtosecond laser-excited n-GaAs surface in a magnetic field have been investigated on the basis of ensemble Monte-Carlo simulation of electrons transport in the time-varying inhomogeneous depletion electric field found self-consistently from the Poisson equation. The real three-valley conduction band structure (T-L-X) and electron scattering by acoustic, polar optical and intervalley phonons is taken into account. The magnetic field is supposed to be classical and parallel to the semiconductor surface.

© 2001 EPS