Abstract
One of the most application-relevant milestones that remained to be achieved in the field of passively modelocked surface-emitting semiconductor lasers was the integration of the saturable absorber with the gain structure. Such lasers could become an enabling technology basis for ultra-compact high-repetition-rate laser devices suitable for cost- efficient high-volume wafer-scale fabrication.
© 2007 IEEE
PDF ArticleMore Like This
A. R. Bellancourt, B. Rudin, D. J. H. C. Maas, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller
CWI1 Conference on Lasers and Electro-Optics (CLEO) 2007
B. Rudin, D. J. H. C. Maas, A.-R. Bellancourt, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller
MF1 Advanced Solid-State Photonics (ASSP) 2007
B. Rudin, D. J. H. C. Maas, A.-R. Bellancourt, M. Golling, T. Südmeyer, and U. Keller
JMC4 Conference on Lasers and Electro-Optics (CLEO) 2008