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Optically-pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs) are ideal sources for generation of high power and high quality beams. Of particular interest is the 1.55 μm window, for applications in telecommunications. However, the poor thermal behavior of quaternary InP-based semiconductor compound often limits the output power available of the devices. We demonstrate for the first time high output power, low pump power threshold density, room-temperature (RT), continuous-wave (CW) operation of an OP-VECSEL operating at 1.56 μm with an hybrid metal-metamorphic GaAs/AlAs mirror.
© 2007 IEEE
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