Abstract

Dilute nitride based quantum wells (QW’s) on GaAs have been extensively studied these last years since they open the 1.3 pm telecom window to GaAs based devices. The use of such alloys on InP substrate have only recently been reported [1]. GalnNAs quantum wells with typical contents of ~ 35 % In and ~0.5 % N content are tensile strained and emit around 1.57 pm. Contrary to P and A1 based compounds on InP, C-band DFB laser diodes can then be efficiently designed and take benefit from tensile strained quantum well properties. In this paper we report on the perfonnances of GalnNAs/InP QWs laser diodes emitting at 1.55pm. We show that the measured and calculated modal gains are in good agreement for temperatures ranging from 20 to 80°C. Furthermore, the temperature evolution of calculated differential gain is in good agreement with the one deduced from relative intensity noise measurements.

© 2007 IEEE