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  • CLEO/Europe and IQEC 2007 Conference Digest
  • (Optica Publishing Group, 2007),
  • paper CE3_3

High Power and High External Efficiency m-Plane InGaN LEDs

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Abstract

Devices grown on c-plane GaN suffer from large internal electric fields due to discontinuities in spontaneous and piezoelectric polarization effects which cause charge separation between holes and electrons in quantum wells and limits the radiative recombination efficiency.1 Additionally, the peak emission wavelength of LEDs grown on c-plane GaN blue-shift with increasing drive current due to screening of the internal fields.2 Nonpolar GaN devices, such as in the /w-plane (l Too) and a-plane (l 120), are free from polarization related electric fields since the polar c-axis is parallel to any heterointerfaces.

© 2007 IEEE

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