Abstract

GaN is a very promising semiconductor host for rare-earth (RE) based electrically-pumped light emitters Recently, simulated emission in Eu-doped GaN has been reported under optical excitation [2], rekindling the hope that an electrically-pumped rare-earth-doped semiconductor laser can be realized. In these laser experiments performed under pulsed UV excitation [3], it was noted that by changing the resonator length the emission wavelength is shifting suggesting that different types of Eu ions are contributing emphasizing the importance to understand the excitation mechanism for different incorporation sites of the ion. This is the purpose of this work.

© 2007 IEEE